| Location | UNSW – South Lab |
| Purpose | epitaxial growth of III-V materials |
| Material systems | III-V semiconductors |
| Source materials | Ga, In, Al, As, Sb, Bi |
| Dopant materials | Si, Be |
| Scale/volume | wafers up to 75mm diameter |
Epitaxial Growth
Veeco Gen930 III-V MBE
Pascal pulsed laser epitaxial system
| Location | UNSW – South Lab |
| Purpose | materials scouting via epitaxial growth techniques |
| Substrate materials | wide range of substrate materials |
| Target materials | LiCoO3, Li3PO4, LiCoO2, VO2, VO3, MoO3, BNBTMn, LSMO, SrTiO3, LaAlO3, SrRuO3, SAO, LLTO, LAO, BTO, LCMO, STO, SrRuO3, NGO, ZMO, BCZT, BSZT, Sm2O3, LNMO, LTO, Cr2O3, Sr3Al2O6 |
| Scale/volume | Single wafers up to 25mm diameter |
| Specifications | 248 nm excimer laser. Max energy 400 mJ per pulse, avg power 8 W. Typically energy used ~100 mJ , In-situ reflective high energy electron diffraction (RHEED). Substrate temperatures up to 1000C |
